Dimensions:
3.3 x 3.3 x 0.75mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
43 W
Height:
0.75mm
Width:
3.3mm
Length:
3.3mm
Package Type:
WDFN
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Manufacturer Standard Lead Time:
45 Weeks
Detailed Description:
N-Channel 30V 11A (Ta), 79A (Tc) 850mW (Ta), 43W (Tc) Surface Mount 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id:
2.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerWDFN
Base Part Number:
NTTFS4932
Gate Charge (Qg) (Max) @ Vgs:
46.5nC @ 10V
Rds On (Max) @ Id, Vgs:
4mOhm @ 20A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3111pF @ 15V
Mounting Type:
Surface Mount
Supplier Device Package:
8-WDFN (3.3x3.3)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
11A (Ta), 79A (Tc)
Customer Reference:
Power Dissipation (Max):
850mW (Ta), 43W (Tc)
Technology:
MOSFET (Metal Oxide)