ON Semiconductor NTMFS5C426NT1G
Product Information
Category:
Power MOSFET
Dimensions:
6.1 x 5.1 x 1.05mm
Maximum Continuous Drain Current:
235 A
Width:
5.1mm
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
DFN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
65 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
4300 pF @ 25 V
Length:
6.1mm
Pin Count:
4+Tab
Forward Transconductance:
145S
Typical Turn-Off Delay Time:
36 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
128 W
Series:
NTMFS5C426N
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.05mm
Typical Turn-On Delay Time:
15 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
1.3 mΩ
Manufacturer Standard Lead Time:
30 Weeks
Detailed Description:
N-Channel 40V 41A (Ta), 235A (Tc) 3.8W (Ta), 128W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerTDFN, 5 Leads
Base Part Number:
NTMFS5
Gate Charge (Qg) (Max) @ Vgs:
65nC @ 10V
Rds On (Max) @ Id, Vgs:
1.3mOhm @ 50A, 10V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
40V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4300pF @ 25V
Mounting Type:
Surface Mount
Supplier Device Package:
5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
41A (Ta), 235A (Tc)
Customer Reference:
Power Dissipation (Max):
3.8W (Ta), 128W (Tc)
Technology:
MOSFET (Metal Oxide)
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This is manufactured by ON Semiconductor. The manufacturer part number is NTMFS5C426NT1G. It is of power mosfet category . The given dimensions of the product include 6.1 x 5.1 x 1.05mm. While 235 a of maximum continuous drain current. Furthermore, the product is 5.1mm wide. It has a maximum of 40 v drain source voltage. The product carries 3.5v of maximum gate threshold voltage. The package is a sort of dfn. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 65 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 4300 pf @ 25 v . Its accurate length is 6.1mm. It contains 4+tab pins. The forward transconductance is 145s . Whereas, its typical turn-off delay time is about 36 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 128 w maximum power dissipation. The product ntmfs5c426n, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.05mm. In addition, it has a typical 15 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 1.3 mω maximum drain source resistance. It has typical 30 weeks of manufacturer standard lead time. It features n-channel 40v 41a (ta), 235a (tc) 3.8w (ta), 128w (tc) surface mount 5-dfn (5x6) (8-sofl). The typical Vgs (th) (max) of the product is 3.5v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn, 5 leads. Base Part Number: ntmfs5. The maximum gate charge and given voltages include 65nc @ 10v. It has a maximum Rds On and voltage of 1.3mohm @ 50a, 10v. It carries FET type n-channel. The on semiconductor's product offers user-desired applications. The product has a 40v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 4300pf @ 25v. 5-dfn (5x6) (8-sofl) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 41a (ta), 235a (tc). The product carries maximum power dissipation 3.8w (ta), 128w (tc). This product use mosfet (metal oxide) technology.
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