Maximum Drain Source Voltage:
1500 V
Typical Gate Charge @ Vgs:
4.2 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
20 W
Maximum Gate Source Voltage:
-30 V, +30 V
Maximum Gate Threshold Voltage:
4V
Height:
4.7mm
Width:
10.16mm
Length:
28.85mm
Maximum Drain Source Resistance:
150 Ω
Package Type:
TO-220F
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
200 mA
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
NDFPD1
Detailed Description:
N-Channel 1500V 100mA (Ta) 2W (Ta), 20W (Tc) Through Hole TO-220-3
Input Capacitance (Ciss) (Max) @ Vds:
80pF @ 30V
Drive Voltage (Max Rds On, Min Rds On):
10V
Mounting Type:
Through Hole
Rds On (Max) @ Id, Vgs:
150Ohm @ 50mA, 10V
Drain to Source Voltage (Vdss):
1500V
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
4.2nC @ 10V
Supplier Device Package:
TO-220-3
Packaging:
Tube
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-220-3 Full Pack
Power Dissipation (Max):
2W (Ta), 20W (Tc)
Current - Continuous Drain (Id) @ 25°C:
100mA (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
