Rohm Semiconductor RSJ10HN06TL
Product Information
Rds On (Max) @ Id, Vgs:
4.2mOhm @ 50A, 10V
Detailed Description:
N-Channel 60V 100A (Ta) 100W (Tc) Surface Mount LPTS
Input Capacitance (Ciss) (Max) @ Vds:
11000pF @ 10V
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
202nC @ 10V
Supplier Device Package:
LPTS
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max):
100W (Tc)
Current - Continuous Drain (Id) @ 25°C:
100A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Rohm Semiconductor
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Yes. We ship RSJ10HN06TL Internationally to many countries around the world.
This is manufactured by Rohm Semiconductor. The manufacturer part number is RSJ10HN06TL. It has a maximum Rds On and voltage of 4.2mohm @ 50a, 10v. It features n-channel 60v 100a (ta) 100w (tc) surface mount lpts. The product's input capacitance at maximum includes 11000pf @ 10v. The drive voltage (maximum and minimum Rds On) of the product includes 4v, 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 1ma. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 202nc @ 10v. lpts is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. The product carries maximum power dissipation 100w (tc). The continuous current drain at 25°C is 100a (ta). This product use mosfet (metal oxide) technology. The rohm semiconductor's product offers user-desired applications.
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