Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
1.7 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
800 mW
Maximum Gate Source Voltage:
-10 V, +10 V
Maximum Gate Threshold Voltage:
1.4V
Height:
0.85mm
Width:
1.6mm
Length:
2mm
Maximum Drain Source Resistance:
241 mΩ
Package Type:
MCPH
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
1.5 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
MCH3376
Detailed Description:
P-Channel 20V 1.5A (Ta) 800mW (Ta) Surface Mount 3-MCPH
Input Capacitance (Ciss) (Max) @ Vds:
120pF @ 10V
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.4V @ 1mA
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±10V
Gate Charge (Qg) (Max) @ Vgs:
1.7nC @ 4.5V
Rds On (Max) @ Id, Vgs:
241mOhm @ 750mA, 4.5V
Supplier Device Package:
3-MCPH
Packaging:
Tape & Reel (TR)
Operating Temperature:
150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
3-SMD, Flat Lead
Power Dissipation (Max):
800mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
1.5A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
