Category:
Power MOSFET
Dimensions:
6.5 x 7.3 x 1.5mm
Maximum Continuous Drain Current:
35 A
Transistor Material:
Si
Width:
7.3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
2.6V
Package Type:
ATPAK
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
34.5 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1820 pF @ 20 V
Length:
6.5mm
Pin Count:
3
Typical Turn-Off Delay Time:
125 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
40 W
Maximum Gate Source Voltage:
-10 V, +10 V
Height:
1.5mm
Typical Turn-On Delay Time:
16 ns
Maximum Drain Source Resistance:
37 mΩ
Base Part Number:
ATP212
Detailed Description:
N-Channel 60V 35A (Ta) 40W (Tc) Surface Mount ATPAK
Input Capacitance (Ciss) (Max) @ Vds:
1820pF @ 20V
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Mounting Type:
Surface Mount
Rds On (Max) @ Id, Vgs:
23mOhm @ 18A, 10V
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
34.5nC @ 10V
Supplier Device Package:
ATPAK
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
ATPAK (2 leads+tab)
Power Dissipation (Max):
40W (Tc)
Current - Continuous Drain (Id) @ 25°C:
35A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
