Central Semiconductor Corp CDM2205-800FP SL
Product Information
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs:
2.7Ohm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
17.4 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
800 V
Vgs (Max):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
48W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
705 pF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220FP
Current - Continuous Drain (Id) @ 25°C:
5A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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FAQs
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Yes. We ship CDM2205-800FP SL Internationally to many countries around the world.
This is manufactured by Central Semiconductor Corp. The manufacturer part number is CDM2205-800FP SL. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. It has a maximum Rds On and voltage of 2.7ohm @ 2.5a, 10v. The maximum gate charge and given voltages include 17.4 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 800 v drain to source voltage. The maximum Vgs rate is 30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 48w (tc). The product's input capacitance at maximum includes 705 pf @ 25 v. The product is available in through hole configuration. to-220fp is the supplier device package value. The continuous current drain at 25°C is 5a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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