Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
17.5 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
29.4 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.2V
Height:
2.38mm
Width:
6.22mm
Length:
6.73mm
Maximum Drain Source Resistance:
12 mΩ
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
12.1 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
NTD4909
Detailed Description:
N-Channel 30V 8.8A (Ta), 41A (Tc) 1.37W (Ta), 29.4W (Tc) Surface Mount DPAK
Input Capacitance (Ciss) (Max) @ Vds:
1314pF @ 15V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.2V @ 250µA
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
17.5nC @ 10V
Rds On (Max) @ Id, Vgs:
8mOhm @ 30A, 10V
Supplier Device Package:
DPAK
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max):
1.37W (Ta), 29.4W (Tc)
Current - Continuous Drain (Id) @ 25°C:
8.8A (Ta), 41A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
