Renesas Electronics America RJK0328DPB-01#J0
Product Information
Rds On (Max) @ Id, Vgs:
2.1mOhm @ 30A, 10V
Detailed Description:
N-Channel 30V 60A (Ta) 65W (Tc) Surface Mount LFPAK
Input Capacitance (Ciss) (Max) @ Vds:
6380pF @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
42nC @ 4.5V
Supplier Device Package:
LFPAK
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
SC-100, SOT-669
Power Dissipation (Max):
65W (Tc)
Current - Continuous Drain (Id) @ 25°C:
60A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Renesas Electronics America
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Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
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This is manufactured by Renesas Electronics America. The manufacturer part number is RJK0328DPB-01#J0. It has a maximum Rds On and voltage of 2.1mohm @ 30a, 10v. It features n-channel 30v 60a (ta) 65w (tc) surface mount lfpak. The product's input capacitance at maximum includes 6380pf @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 1ma. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 42nc @ 4.5v. lfpak is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in sc-100, sot-669. The product carries maximum power dissipation 65w (tc). The continuous current drain at 25°C is 60a (ta). This product use mosfet (metal oxide) technology. The renesas electronics america's product offers user-desired applications.
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