ON Semiconductor NVTFS4823NTAG
Product Information
Category:
Power MOSFET
Dimensions:
3.15 x 3.15 x 0.75mm
Maximum Continuous Drain Current:
30 A
Transistor Material:
Si
Width:
3.15mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.5V
Maximum Drain Source Resistance:
17.5 mΩ
Package Type:
WDFN
Number of Elements per Chip:
1
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
12 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
750 pF @ 12 V
Length:
3.15mm
Pin Count:
8
Typical Turn-Off Delay Time:
14 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
21 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.75mm
Typical Turn-On Delay Time:
12 ns
Minimum Operating Temperature:
-55 °C
Base Part Number:
NVTFS4
Detailed Description:
N-Channel 30V 13A (Ta) 3.1W (Ta), 21W (Tc) Surface Mount 8-WDFN (3.3x3.3)
Input Capacitance (Ciss) (Max) @ Vds:
750pF @ 12V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
6nC @ 4.5V
Rds On (Max) @ Id, Vgs:
10.5mOhm @ 15A, 10V
Supplier Device Package:
8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
8-PowerWDFN
Power Dissipation (Max):
3.1W (Ta), 21W (Tc)
Current - Continuous Drain (Id) @ 25°C:
13A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NVTFS4823NTAG. It is of power mosfet category . The given dimensions of the product include 3.15 x 3.15 x 0.75mm. While 30 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.15mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2.5v of maximum gate threshold voltage. It provides up to 17.5 mω maximum drain source resistance. The package is a sort of wdfn. It consists of 1 elements per chip. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 12 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 750 pf @ 12 v . Its accurate length is 3.15mm. It contains 8 pins. Whereas, its typical turn-off delay time is about 14 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 21 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.75mm. In addition, it has a typical 12 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Base Part Number: nvtfs4. It features n-channel 30v 13a (ta) 3.1w (ta), 21w (tc) surface mount 8-wdfn (3.3x3.3). The product's input capacitance at maximum includes 750pf @ 12v. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 6nc @ 4.5v. It has a maximum Rds On and voltage of 10.5mohm @ 15a, 10v. 8-wdfn (3.3x3.3) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 175°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in 8-powerwdfn. The product carries maximum power dissipation 3.1w (ta), 21w (tc). The continuous current drain at 25°C is 13a (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.
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