Nexperia USA Inc. PSMN1R1-30PL,127
Product Information
The PSMN1R1-30PL,127 is a high-performance power MOSFET from Nexperia USA Inc. designed to deliver efficient and reliable switching capabilities for various applications. Its advanced technology and robust construction offer low on-state resistance and excellent thermal performance.
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.2V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
1.3mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs:
243 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tube
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
338W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
14850 pF @ 15 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220AB
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PSMN1R1
ECCN:
EAR99
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FAQs
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Yes. We ship PSMN1R1-30PL,127 Internationally to many countries around the world.
The PSMN1R1-30PL,127 MOSFET is a powerful N-Channel metal-oxide-semiconductor field-effect transistor designed by Nexperia. Its impressive performance characteristics make it suitable for demanding applications requiring high power handling and efficient switching capabilities. Its high current handling, voltage rating, and reliable TO220AB package make it a reliable choice for demanding applications requiring efficient power handling and switching capabilities. The TO220AB package type ensures easy integration and efficient heat dissipation.
Key Features of Nexperia USA Inc. PSMN1R1-30PL,127 Include:
Where to Use the Nexperia USA Inc. PSMN1R1-30PL,127?
The PSMN1R1-30PL,127 MOSFET is widely used in various applications, including:
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