Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
0.6 nC @ 4 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.25 W
Maximum Gate Source Voltage:
-8 V, +8 V
Maximum Gate Threshold Voltage:
1V
Height:
1.01mm
Width:
1.4mm
Length:
3.04mm
Maximum Drain Source Resistance:
115 mΩ
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
2.8 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
41 Weeks
Detailed Description:
N-Channel 20V 2.8A (Ta) 1.25W (Ta) Surface Mount SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Base Part Number:
MGSF2
Gate Charge (Qg) (Max) @ Vgs:
3.5nC @ 4V
Rds On (Max) @ Id, Vgs:
85mOhm @ 3.6A, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
150pF @ 5V
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3 (TO-236)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
2.8A (Ta)
Customer Reference:
Power Dissipation (Max):
1.25W (Ta)
Technology:
MOSFET (Metal Oxide)
