Rohm Semiconductor RQ7E055ATTCR

RQ7E055ATTCR Rohm Semiconductor
Rohm Semiconductor

Product Information

Manufacturer Standard Lead Time:
16 Weeks
Detailed Description:
P-Channel 30V 5.5A (Tc) 1.5W (Tc) Surface Mount TSMT8
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SMD, Flat Lead
Base Part Number:
RQ7E055
Gate Charge (Qg) (Max) @ Vgs:
18.8nC @ 10V
Rds On (Max) @ Id, Vgs:
24.5mOhm @ 5.5A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
Rohm Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
860pF @ 15V
Mounting Type:
Surface Mount
Supplier Device Package:
TSMT8
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
5.5A (Tc)
Customer Reference:
Power Dissipation (Max):
1.5W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Rohm Semiconductor. The manufacturer part number is RQ7E055ATTCR. It has typical 16 weeks of manufacturer standard lead time. It features p-channel 30v 5.5a (tc) 1.5w (tc) surface mount tsmt8. The typical Vgs (th) (max) of the product is 2.5v @ 1ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-smd, flat lead. Base Part Number: rq7e055. The maximum gate charge and given voltages include 18.8nc @ 10v. It has a maximum Rds On and voltage of 24.5mohm @ 5.5a, 10v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The rohm semiconductor's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 860pf @ 15v. The product is available in surface mount configuration. tsmt8 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 5.5a (tc). The product carries maximum power dissipation 1.5w (tc). This product use mosfet (metal oxide) technology.

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Transistor, MOSFET Level 1 MSL(Environmental Information)
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TSMT8M-Cu-HF Constitution Material List(Environmental Information)
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RQ7E055AT ESD Data(Environmental Information)
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Transistor Whisker Info(Environmental Information)
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RQ7E055AT(Datasheets)
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TSMT8 TR Taping Spec(Datasheets)
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TSMT8SCu Inner Structure(Other Related Documents)
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Transistor, MOSFET Flammability(Other Related Documents)
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TSMT8 Part Marking(Other Related Documents)
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TSMT8 MOS Reliability Test(Other Related Documents)

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FAQs

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