Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
11.5 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
41.7 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.5V
Height:
1.1mm
Width:
6.1mm
Length:
5.1mm
Maximum Drain Source Resistance:
11.4 mΩ
Package Type:
SO-8FL
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
57 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
Base Part Number:
NTMFS4
Detailed Description:
N-Channel 30V 8.3A (Ta), 57A (Tc) 870mW (Ta), 41.7W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Input Capacitance (Ciss) (Max) @ Vds:
1436pF @ 12V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
17nC @ 4.5V
Rds On (Max) @ Id, Vgs:
7mOhm @ 30A, 10V
Supplier Device Package:
5-DFN (5x6) (8-SOFL)
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
8-PowerTDFN, 5 Leads
Power Dissipation (Max):
870mW (Ta), 41.7W (Tc)
Current - Continuous Drain (Id) @ 25°C:
8.3A (Ta), 57A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
