This is manufactured by ON Semiconductor. The manufacturer part number is NVMFS5826NLWFT1G. Base Part Number: nvmfs5. It features n-channel 60v 8a (ta) 3.6w (ta), 39w (tc) surface mount 5-dfn (5x6) (8-sofl). The product's input capacitance at maximum includes 850pf @ 25v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 17nc @ 10v. It has a maximum Rds On and voltage of 24mohm @ 10a, 10v. 5-dfn (5x6) (8-sofl) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 175°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in 8-powertdfn. The product carries maximum power dissipation 3.6w (ta), 39w (tc). The continuous current drain at 25°C is 8a (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.
NVMFS5826NL(Datasheets)
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This is manufactured by ON Semiconductor. The manufacturer part number is NVMFS5826NLWFT1G. Base Part Number: nvmfs5. It features n-channel 60v 8a (ta) 3.6w (ta), 39w (tc) surface mount 5-dfn (5x6) (8-sofl). The product's input capacitance at maximum includes 850pf @ 25v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 17nc @ 10v. It has a maximum Rds On and voltage of 24mohm @ 10a, 10v. 5-dfn (5x6) (8-sofl) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 175°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in 8-powertdfn. The product carries maximum power dissipation 3.6w (ta), 39w (tc). The continuous current drain at 25°C is 8a (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.
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