Category:
Power MOSFET
Dimensions:
2 x 1.6 x 0.85mm
Maximum Continuous Drain Current:
3.5 A
Transistor Material:
Si
Width:
1.6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
12 V
Maximum Gate Threshold Voltage:
0.8V
Package Type:
MCHP
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
6.2 nC @ 2.5 V
Channel Type:
P
Typical Input Capacitance @ Vds:
1010 pF @ -6 V
Length:
2mm
Pin Count:
3
Typical Turn-Off Delay Time:
109 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1 W
Maximum Gate Source Voltage:
-5 V, +5 V
Height:
0.85mm
Typical Turn-On Delay Time:
9.9 ns
Minimum Operating Temperature:
-5 °C
Maximum Drain Source Resistance:
500 mΩ
Base Part Number:
MCH3383
Detailed Description:
P-Channel 12V 3.5A (Ta) 1W (Ta) Surface Mount SC-70FL/MCPH3
Input Capacitance (Ciss) (Max) @ Vds:
1010pF @ 6V
Drive Voltage (Max Rds On, Min Rds On):
0.9V, 2.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
800mV @ 1mA
Drain to Source Voltage (Vdss):
12V
Vgs (Max):
±5V
Gate Charge (Qg) (Max) @ Vgs:
6.2nC @ 2.5V
Rds On (Max) @ Id, Vgs:
69mOhm @ 1.5A, 2.5V
Supplier Device Package:
SC-70FL/MCPH3
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TA)
FET Type:
P-Channel
Customer Reference:
Package / Case:
SOT-23-3 Flat Leads
Power Dissipation (Max):
1W (Ta)
Current - Continuous Drain (Id) @ 25°C:
3.5A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
