Rohm Semiconductor RSD175N10TL
Product Information
Rds On (Max) @ Id, Vgs:
105mOhm @ 8.8A, 10V
Detailed Description:
N-Channel 100V 17.5A (Ta) 20W (Tc) Surface Mount CPT3
Input Capacitance (Ciss) (Max) @ Vds:
950pF @ 25V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
24nC @ 10V
Supplier Device Package:
CPT3
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Packaging:
Cut Tape (CT)
Operating Temperature:
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max):
20W (Tc)
Current - Continuous Drain (Id) @ 25°C:
17.5A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Rohm Semiconductor
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Yes. We ship RSD175N10TL Internationally to many countries around the world.
This is manufactured by Rohm Semiconductor. The manufacturer part number is RSD175N10TL. It has a maximum Rds On and voltage of 105mohm @ 8.8a, 10v. It features n-channel 100v 17.5a (ta) 20w (tc) surface mount cpt3. The product's input capacitance at maximum includes 950pf @ 25v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 1ma. The product has a 100v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 24nc @ 10v. cpt3 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. It carries FET type n-channel. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. The product carries maximum power dissipation 20w (tc). The continuous current drain at 25°C is 17.5a (ta). This product use mosfet (metal oxide) technology. The rohm semiconductor's product offers user-desired applications.
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