Diodes Incorporated ZXMP2120G4TA
Product Information
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3.5V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Rds On (Max) @ Id, Vgs:
25Ohm @ 150mA, 10V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Affected
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
200 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
100 pF @ 25 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-223-3
Current - Continuous Drain (Id) @ 25°C:
200mA (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
ZXMP2120
ECCN:
EAR99
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FAQs
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Yes. We ship ZXMP2120G4TA Internationally to many countries around the world.
This is manufactured by Diodes Incorporated. The manufacturer part number is ZXMP2120G4TA. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3.5v @ 1ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-261-4, to-261aa. It has a maximum Rds On and voltage of 25ohm @ 150ma, 10v. The product is rohs3 compliant. In addition, it is reach affected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 200 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 2w (ta). The product's input capacitance at maximum includes 100 pf @ 25 v. The product is available in surface mount configuration. sot-223-3 is the supplier device package value. The continuous current drain at 25°C is 200ma (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to zxmp2120, a base product number of the product. The product is designated with the ear99 code number.
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