ON Semiconductor ECH8310-TL-H
Product Information
Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
28 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.5 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.6V
Height:
0.9mm
Width:
2.3mm
Length:
2.9mm
Maximum Drain Source Resistance:
17 mΩ
Package Type:
ECH
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
9 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
23 Weeks
Base Part Number:
ECH8310
Detailed Description:
P-Channel 30V 9A (Ta) 1.5W (Ta) Surface Mount 8-ECH
Input Capacitance (Ciss) (Max) @ Vds:
1400pF @ 10V
Mounting Type:
Surface Mount
Rds On (Max) @ Id, Vgs:
17mOhm @ 4.5A, 10V
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
28nC @ 10V
Supplier Device Package:
8-ECH
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
8-SMD, Flat Lead
Power Dissipation (Max):
1.5W (Ta)
Current - Continuous Drain (Id) @ 25°C:
9A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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FAQs
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We use our internationally recognized delivery partners UPS/DHL. Collection of ET11771862 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11771862.
Yes. We ship ECH8310-TL-H Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is ECH8310-TL-H. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 28 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.5 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 2.6v of maximum gate threshold voltage. In addition, the height is 0.9mm. Furthermore, the product is 2.3mm wide. Its accurate length is 2.9mm. It provides up to 17 mω maximum drain source resistance. The package is a sort of ech. It consists of 1 elements per chip. While 9 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers single transistor configuration. It has typical 23 weeks of manufacturer standard lead time. Base Part Number: ech8310. It features p-channel 30v 9a (ta) 1.5w (ta) surface mount 8-ech. The product's input capacitance at maximum includes 1400pf @ 10v. It has a maximum Rds On and voltage of 17mohm @ 4.5a, 10v. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 28nc @ 10v. 8-ech is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type p-channel. Moreover, the product comes in 8-smd, flat lead. The product carries maximum power dissipation 1.5w (ta). The continuous current drain at 25°C is 9a (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.
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