Maximum Continuous Drain Current:
5.5 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Priced to Clear:
Yes
Maximum Drain Source Voltage:
500 V
Maximum Gate Threshold Voltage:
4.5V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
18.5 nC @ 10 V
Channel Type:
N
Length:
6.73mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
117 W
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
2.38mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
1.5 Ω
Base Part Number:
NDD05
Detailed Description:
N-Channel 500V 4.7A (Tc) 83W (Tc) Surface Mount DPAK
Input Capacitance (Ciss) (Max) @ Vds:
530pF @ 25V
Drive Voltage (Max Rds On, Min Rds On):
10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
4.5V @ 50µA
Drain to Source Voltage (Vdss):
500V
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
18.5nC @ 10V
Rds On (Max) @ Id, Vgs:
1.5Ohm @ 2.2A, 10V
Supplier Device Package:
DPAK
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max):
83W (Tc)
Current - Continuous Drain (Id) @ 25°C:
4.7A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
