Infineon Technologies BSC12DN20NS3 G

BSC12DN20NS3-G Infineon Technologies BSC12DN20NS3 G
Infineon Technologies

Product Information

Manufacturer Standard Lead Time:
16 Weeks
Vgs(th) (Max) @ Id:
4V @ 25µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
8.7nC @ 10V
Rds On (Max) @ Id, Vgs:
125 mOhm @ 5.7A, 10V
FET Type:
N-Channel
Standard Package:
1
Manufacturer:
Infineon Technologies
Drain to Source Voltage (Vdss):
200V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
680pF @ 100V
Mounting Type:
Surface Mount
Series:
OptiMOS™
Supplier Device Package:
PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
11.3A (Tc)
Power Dissipation (Max):
50W (Tc)
Technology:
MOSFET (Metal Oxide)
Other Names:
BSC12DN20NS3GCT
RoHs Compliant
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This is manufactured by Infineon Technologies. The manufacturer part number is BSC12DN20NS3 G. It has typical 16 weeks of manufacturer standard lead time. The typical Vgs (th) (max) of the product is 4v @ 25µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn. The maximum gate charge and given voltages include 8.7nc @ 10v. It has a maximum Rds On and voltage of 125 mohm @ 5.7a, 10v. It carries FET type n-channel. It is available in the standard package of 1. The infineon technologies's product offers user-desired applications. The product has a 200v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 680pf @ 100v. The product is available in surface mount configuration. The product optimos™, is a highly preferred choice for users. pg-tdson-8 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 11.3a (tc). The product carries maximum power dissipation 50w (tc). This product use mosfet (metal oxide) technology. Alternative Names include bsc12dn20ns3gct.

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FAQs

Yes. You can also search BSC12DN20NS3 G on website for other similar products.
We accept all major payment methods for all products including ET11759403. Please check your shopping cart at the time of order.
You can order Infineon Technologies brand products with BSC12DN20NS3 G directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon Technologies BSC12DN20NS3 G. You can also check on our website or by contacting our customer support team for further order details on Infineon Technologies BSC12DN20NS3 G.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11759403 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon Technologies" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11759403.
Yes. We ship BSC12DN20NS3 G Internationally to many countries around the world.