ON Semiconductor NTA4151PT1G
Product Information
Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
2.1 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
300 mW
Maximum Gate Source Voltage:
-6 V, +6 V
Maximum Gate Threshold Voltage:
1.2V
Height:
0.8mm
Width:
0.9mm
Length:
1.65mm
Maximum Drain Source Resistance:
1 Ω
Package Type:
SOT-416 (SC-75)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
760 mA
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
16 Weeks
Detailed Description:
P-Channel 20V 760mA (Tj) 301mW (Tj) Surface Mount SC-75, SOT-416
Vgs(th) (Max) @ Id:
450mV @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SC-75, SOT-416
Base Part Number:
NTA41
Gate Charge (Qg) (Max) @ Vgs:
2.1nC @ 4.5V
Rds On (Max) @ Id, Vgs:
360mOhm @ 350mA, 4.5V
FET Type:
P-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±6V
Input Capacitance (Ciss) (Max) @ Vds:
156pF @ 5V
Mounting Type:
Surface Mount
Supplier Device Package:
SC-75, SOT-416
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
760mA (Tj)
Customer Reference:
Power Dissipation (Max):
301mW (Tj)
Technology:
MOSFET (Metal Oxide)
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Yes. We ship NTA4151PT1G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NTA4151PT1G. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 2.1 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 300 mw maximum power dissipation. It features a maximum gate source voltage of -6 v, +6 v. The product carries 1.2v of maximum gate threshold voltage. In addition, the height is 0.8mm. Furthermore, the product is 0.9mm wide. Its accurate length is 1.65mm. It provides up to 1 ω maximum drain source resistance. The package is a sort of sot-416 (sc-75). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 760 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 16 weeks of manufacturer standard lead time. It features p-channel 20v 760ma (tj) 301mw (tj) surface mount sc-75, sot-416. The typical Vgs (th) (max) of the product is 450mv @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sc-75, sot-416. Base Part Number: nta41. The maximum gate charge and given voltages include 2.1nc @ 4.5v. It has a maximum Rds On and voltage of 360mohm @ 350ma, 4.5v. It carries FET type p-channel. The on semiconductor's product offers user-desired applications. The product has a 20v drain to source voltage. The maximum Vgs rate is ±6v. The product's input capacitance at maximum includes 156pf @ 5v. sc-75, sot-416 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 760ma (tj). The product carries maximum power dissipation 301mw (tj). This product use mosfet (metal oxide) technology.
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