Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
11 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.63 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.5V
Height:
2.38mm
Width:
6.22mm
Length:
6.73mm
Maximum Drain Source Resistance:
9 mΩ
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
58 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Detailed Description:
N-Channel 30V 9.6A (Ta), 58A (Tc) 1.4W (Ta), 52W (Tc) Surface Mount DPAK
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
NTD48
Gate Charge (Qg) (Max) @ Vgs:
25nC @ 11.5V
Rds On (Max) @ Id, Vgs:
9mOhm @ 30A, 10V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1456pF @ 12V
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 11.5V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
9.6A (Ta), 58A (Tc)
Customer Reference:
Power Dissipation (Max):
1.4W (Ta), 52W (Tc)
Technology:
MOSFET (Metal Oxide)
This is manufactured by ON Semiconductor. The manufacturer part number is NTD4809NT4G. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 11 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2.63 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 2.5v of maximum gate threshold voltage. In addition, the height is 2.38mm. Furthermore, the product is 6.22mm wide. Its accurate length is 6.73mm. It provides up to 9 mω maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 58 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 2 weeks of manufacturer standard lead time. It features n-channel 30v 9.6a (ta), 58a (tc) 1.4w (ta), 52w (tc) surface mount dpak. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Base Part Number: ntd48. The maximum gate charge and given voltages include 25nc @ 11.5v. It has a maximum Rds On and voltage of 9mohm @ 30a, 10v. It carries FET type n-channel. The on semiconductor's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 1456pf @ 12v. dpak is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 9.6a (ta), 58a (tc). The product carries maximum power dissipation 1.4w (ta), 52w (tc). This product use mosfet (metal oxide) technology.
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