Category:
Power MOSFET
Dimensions:
1.6 x 1.5 x 0.56mm
Maximum Continuous Drain Current:
3.5 A
Transistor Material:
Si
Width:
1.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.6V
Maximum Drain Source Resistance:
72 mΩ
Package Type:
SCH
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
5.6 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
280 pF @ 10 V
Length:
1.6mm
Pin Count:
6
Typical Turn-Off Delay Time:
21 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.56mm
Typical Turn-On Delay Time:
5.8 ns
Base Part Number:
SCH143
Detailed Description:
N-Channel 30V 3.5A (Ta) 1W (Ta) Surface Mount 6-SCH
Input Capacitance (Ciss) (Max) @ Vds:
280pF @ 10V
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Mounting Type:
Surface Mount
Rds On (Max) @ Id, Vgs:
72mOhm @ 1.5A, 10V
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
5.6nC @ 10V
Supplier Device Package:
6-SCH
Packaging:
Tape & Reel (TR)
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
SOT-563, SOT-666
Power Dissipation (Max):
1W (Ta)
Current - Continuous Drain (Id) @ 25°C:
3.5A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor