Maximum Continuous Drain Current:
130 mA
Width:
1.4mm
Automotive Standard:
AEC-Q101
Transistor Configuration:
Single
Maximum Drain Source Voltage:
50 V
Maximum Gate Threshold Voltage:
2V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.9V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
2.2 nC @ 10 V
Channel Type:
P
Length:
3.04mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
225 mW
Maximum Gate Source Voltage:
±20 V dc
Height:
1.01mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
2.2V
Maximum Drain Source Resistance:
10 Ω
Manufacturer Standard Lead Time:
51 Weeks
Detailed Description:
P-Channel 50V 130mA (Ta) 225mW (Ta) Surface Mount SOT-23-3
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Base Part Number:
BVSS84
Gate Charge (Qg) (Max) @ Vgs:
2.2nC @ 10V
Rds On (Max) @ Id, Vgs:
10Ohm @ 100mA, 5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
50V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
36pF @ 5V
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
130mA (Ta)
Customer Reference:
Power Dissipation (Max):
225mW (Ta)
Technology:
MOSFET (Metal Oxide)
