Toshiba Semiconductor and Storage TK12A50E,S4X

TK12A50E-S4X Toshiba Semiconductor and Storage TK12A50E,S4X
TK12A50E,S4X
Toshiba Semiconductor and Storage

Product Information

Manufacturer Standard Lead Time:
12 Weeks
Detailed Description:
N-Channel 500V 12A (Ta) 45W (Tc) Through Hole TO-220SIS
Vgs(th) (Max) @ Id:
4V @ 1.2mA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs:
40nC @ 10V
Rds On (Max) @ Id, Vgs:
520 mOhm @ 6A, 10V
FET Type:
N-Channel
Standard Package:
50
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
500V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1300pF @ 25V
Mounting Type:
Through Hole
Supplier Device Package:
TO-220SIS
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
12A (Ta)
Power Dissipation (Max):
45W (Tc)
Technology:
MOSFET (Metal Oxide)
Other Names:
TK12A50E,S4X(S TK12A50E,S5X TK12A50E,S5X(M TK12A50ES4X TK12A50ES4X(S TK12A50ES4X(S-ND TK12A50ES5X TK12A50ES5X-ND
RoHs Compliant
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK12A50E,S4X. It has typical 12 weeks of manufacturer standard lead time. It features n-channel 500v 12a (ta) 45w (tc) through hole to-220sis. The typical Vgs (th) (max) of the product is 4v @ 1.2ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. The maximum gate charge and given voltages include 40nc @ 10v. It has a maximum Rds On and voltage of 520 mohm @ 6a, 10v. It carries FET type n-channel. It is available in the standard package of 50. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 500v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 1300pf @ 25v. The product is available in through hole configuration. to-220sis is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 12a (ta). The product carries maximum power dissipation 45w (tc). This product use mosfet (metal oxide) technology. Alternative Names include tk12a50e,s4x(s tk12a50e,s5x tk12a50e,s5x(m tk12a50es4x tk12a50es4x(s tk12a50es4x(s-nd tk12a50es5x tk12a50es5x-nd.

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TK12A50E(Datasheets)

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FAQs

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Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage TK12A50E,S4X. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage TK12A50E,S4X.
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