Rohm Semiconductor R6030ENZ1C9
Product Information
Rds On (Max) @ Id, Vgs:
130mOhm @ 14.5A, 10V
Detailed Description:
N-Channel 600V 30A (Tc) 120W (Tc) Through Hole TO-247
Input Capacitance (Ciss) (Max) @ Vds:
2100pF @ 25V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
4V @ 1mA
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
85nC @ 10V
Supplier Device Package:
TO-247
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Operating Temperature:
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-247-3
Power Dissipation (Max):
120W (Tc)
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Rohm Semiconductor
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Yes. We ship R6030ENZ1C9 Internationally to many countries around the world.
This is manufactured by Rohm Semiconductor. The manufacturer part number is R6030ENZ1C9. It has a maximum Rds On and voltage of 130mohm @ 14.5a, 10v. It features n-channel 600v 30a (tc) 120w (tc) through hole to-247. The product's input capacitance at maximum includes 2100pf @ 25v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 4v @ 1ma. The product has a 600v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 85nc @ 10v. to-247 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. It carries FET type n-channel. Moreover, the product comes in to-247-3. The product carries maximum power dissipation 120w (tc). The continuous current drain at 25°C is 30a (tc). This product use mosfet (metal oxide) technology. The rohm semiconductor's product offers user-desired applications.
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