ON Semiconductor NTR1P02T1G
Product Information
Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
2.5 nC @ 5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
400 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.3V
Height:
0.94mm
Width:
1.3mm
Length:
2.9mm
Maximum Drain Source Resistance:
180 mΩ
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
1 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
52 Weeks
Detailed Description:
P-Channel 20V 1A (Ta) 400mW (Ta) Surface Mount SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id:
2.3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Base Part Number:
NTR1P02
Gate Charge (Qg) (Max) @ Vgs:
2.5nC @ 5V
Rds On (Max) @ Id, Vgs:
180mOhm @ 1.5A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
165pF @ 5V
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3 (TO-236)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
1A (Ta)
Customer Reference:
Power Dissipation (Max):
400mW (Ta)
Technology:
MOSFET (Metal Oxide)
Checking for live stock
FAQs
Yes. You can also search NTR1P02T1G on website for other similar products.
We accept all major payment methods for all products including ET11654719. Please check your shopping cart at the time of order.
You can order ON Semiconductor brand products with NTR1P02T1G directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ON Semiconductor NTR1P02T1G. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor NTR1P02T1G.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11654719 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11654719.
Yes. We ship NTR1P02T1G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NTR1P02T1G. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 2.5 nc @ 5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 400 mw maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 2.3v of maximum gate threshold voltage. In addition, the height is 0.94mm. Furthermore, the product is 1.3mm wide. Its accurate length is 2.9mm. It provides up to 180 mω maximum drain source resistance. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 1 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 52 weeks of manufacturer standard lead time. It features p-channel 20v 1a (ta) 400mw (ta) surface mount sot-23-3 (to-236). The typical Vgs (th) (max) of the product is 2.3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Base Part Number: ntr1p02. The maximum gate charge and given voltages include 2.5nc @ 5v. It has a maximum Rds On and voltage of 180mohm @ 1.5a, 10v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The on semiconductor's product offers user-desired applications. The product has a 20v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 165pf @ 5v. sot-23-3 (to-236) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 1a (ta). The product carries maximum power dissipation 400mw (ta). This product use mosfet (metal oxide) technology.
Reviews
Don’t hesitate to ask questions for better clarification.