Category:
Power MOSFET
Dimensions:
2 x 1.6 x 0.83mm
Maximum Continuous Drain Current:
3 A
Transistor Material:
Si
Width:
1.6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
12 V
Maximum Gate Threshold Voltage:
1.4V
Maximum Drain Source Resistance:
215 mΩ
Package Type:
MCPH3
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
5.6 nC @ 4 V
Channel Type:
P
Typical Input Capacitance @ Vds:
405 pF @ -10 V
Length:
2mm
Pin Count:
3
Forward Transconductance:
4.5S
Typical Turn-Off Delay Time:
41 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1 W
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
0.83mm
Typical Turn-On Delay Time:
8.8 ns
Forward Diode Voltage:
1.2V
Base Part Number:
MCH33
Detailed Description:
P-Channel 12V 3A (Ta) 1W (Ta) Surface Mount SC-70FL/MCPH3
Input Capacitance (Ciss) (Max) @ Vds:
405pF @ 6V
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.4V @ 1mA
Drain to Source Voltage (Vdss):
12V
Vgs (Max):
±8V
Gate Charge (Qg) (Max) @ Vgs:
5.6nC @ 4.5V
Rds On (Max) @ Id, Vgs:
70mOhm @ 1.5A, 4.5V
Supplier Device Package:
SC-70FL/MCPH3
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
3-SMD, Flat Lead
Power Dissipation (Max):
1W (Ta)
Current - Continuous Drain (Id) @ 25°C:
3A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
