ON Semiconductor NTMS4816NR2G
Product Information
Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
9.2 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.04 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
3V
Height:
1.5mm
Width:
4mm
Length:
5mm
Maximum Drain Source Resistance:
16 mΩ
Package Type:
SOIC
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
11 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Detailed Description:
N-Channel 30V 6.8A (Ta) 780mW (Ta) Surface Mount 8-SOIC
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Base Part Number:
NTMS48
Gate Charge (Qg) (Max) @ Vgs:
18.3nC @ 10V
Rds On (Max) @ Id, Vgs:
10mOhm @ 9A, 10V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1060pF @ 25V
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
6.8A (Ta)
Customer Reference:
Power Dissipation (Max):
780mW (Ta)
Technology:
MOSFET (Metal Oxide)
Checking for live stock
FAQs
Yes. You can also search NTMS4816NR2G on website for other similar products.
We accept all major payment methods for all products including ET11626192. Please check your shopping cart at the time of order.
You can order ON Semiconductor brand products with NTMS4816NR2G directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ON Semiconductor NTMS4816NR2G. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor NTMS4816NR2G.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11626192 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11626192.
Yes. We ship NTMS4816NR2G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NTMS4816NR2G. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 9.2 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2.04 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 3v of maximum gate threshold voltage. In addition, the height is 1.5mm. Furthermore, the product is 4mm wide. Its accurate length is 5mm. It provides up to 16 mω maximum drain source resistance. The package is a sort of soic. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 11 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers single transistor configuration. It has typical 2 weeks of manufacturer standard lead time. It features n-channel 30v 6.8a (ta) 780mw (ta) surface mount 8-soic. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). Base Part Number: ntms48. The maximum gate charge and given voltages include 18.3nc @ 10v. It has a maximum Rds On and voltage of 10mohm @ 9a, 10v. It carries FET type n-channel. The on semiconductor's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 1060pf @ 25v. 8-soic is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 6.8a (ta). The product carries maximum power dissipation 780mw (ta). This product use mosfet (metal oxide) technology.
Reviews
Don’t hesitate to ask questions for better clarification.