ON Semiconductor NDPL180N10BG

ON Semiconductor

Product Information

Base Part Number:
NDPL18
Detailed Description:
N-Channel 100V 180A (Ta) 2.1W (Ta), 200W (Tc) Through Hole TO-220-3
Input Capacitance (Ciss) (Max) @ Vds:
6950pF @ 50V
Drive Voltage (Max Rds On, Min Rds On):
10V, 15V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
4V @ 1mA
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
95nC @ 10V
Rds On (Max) @ Id, Vgs:
3mOhm @ 15V, 50A
Supplier Device Package:
TO-220-3
Packaging:
Tube
Operating Temperature:
175°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-220-3
Power Dissipation (Max):
2.1W (Ta), 200W (Tc)
Current - Continuous Drain (Id) @ 25°C:
180A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NDPL180N10BG. Base Part Number: ndpl18. It features n-channel 100v 180a (ta) 2.1w (ta), 200w (tc) through hole to-220-3. The product's input capacitance at maximum includes 6950pf @ 50v. The drive voltage (maximum and minimum Rds On) of the product includes 10v, 15v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 4v @ 1ma. The product has a 100v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 95nc @ 10v. It has a maximum Rds On and voltage of 3mohm @ 15v, 50a. to-220-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The product has 175°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-220-3. The product carries maximum power dissipation 2.1w (ta), 200w (tc). The continuous current drain at 25°C is 180a (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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Mult Devices 28/Apr/2017(PCN Obsolescence/ EOL)

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