Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
29 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.5 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.5V
Height:
1.5mm
Width:
4mm
Length:
5mm
Maximum Drain Source Resistance:
19 mΩ
Package Type:
SOIC
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
11.4 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
27 Weeks
Detailed Description:
P-Channel 30V 6.6A (Ta) 840mW (Ta) Surface Mount 8-SOIC
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Base Part Number:
NTMS41
Gate Charge (Qg) (Max) @ Vgs:
55nC @ 10V
Rds On (Max) @ Id, Vgs:
12mOhm @ 11.4A, 10V
FET Type:
P-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3100pF @ 24V
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
6.6A (Ta)
Customer Reference:
Power Dissipation (Max):
840mW (Ta)
Technology:
MOSFET (Metal Oxide)
