ON Semiconductor NTMS4177PR2G
Product Information
Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
29 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.5 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.5V
Height:
1.5mm
Width:
4mm
Length:
5mm
Maximum Drain Source Resistance:
19 mΩ
Package Type:
SOIC
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
11.4 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
27 Weeks
Detailed Description:
P-Channel 30V 6.6A (Ta) 840mW (Ta) Surface Mount 8-SOIC
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Base Part Number:
NTMS41
Gate Charge (Qg) (Max) @ Vgs:
55nC @ 10V
Rds On (Max) @ Id, Vgs:
12mOhm @ 11.4A, 10V
FET Type:
P-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3100pF @ 24V
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
6.6A (Ta)
Customer Reference:
Power Dissipation (Max):
840mW (Ta)
Technology:
MOSFET (Metal Oxide)
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FAQs
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We use our internationally recognized delivery partners UPS/DHL. Collection of ET11600239 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11600239.
Yes. We ship NTMS4177PR2G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NTMS4177PR2G. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 29 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2.5 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 2.5v of maximum gate threshold voltage. In addition, the height is 1.5mm. Furthermore, the product is 4mm wide. Its accurate length is 5mm. It provides up to 19 mω maximum drain source resistance. The package is a sort of soic. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 11.4 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers single transistor configuration. It has typical 27 weeks of manufacturer standard lead time. It features p-channel 30v 6.6a (ta) 840mw (ta) surface mount 8-soic. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). Base Part Number: ntms41. The maximum gate charge and given voltages include 55nc @ 10v. It has a maximum Rds On and voltage of 12mohm @ 11.4a, 10v. It carries FET type p-channel. The on semiconductor's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 3100pf @ 24v. 8-soic is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 6.6a (ta). The product carries maximum power dissipation 840mw (ta). This product use mosfet (metal oxide) technology.
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