Fairchild/ON Semiconductor FDH50N50_F133

FDH50N50_F133 Fairchild/ON Semiconductor
Fairchild/ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
16 Weeks
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Gate Charge (Qg) (Max) @ Vgs:
137nC @ 10V
Rds On (Max) @ Id, Vgs:
105 mOhm @ 24A, 10V
FET Type:
N-Channel
Standard Package:
30
Manufacturer:
Fairchild/ON Semiconductor
Drain to Source Voltage (Vdss):
500V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
6460pF @ 25V
Mounting Type:
Through Hole
Series:
UniFET™
Supplier Device Package:
TO-247
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
48A (Tc)
Power Dissipation (Max):
625W (Tc)
Technology:
MOSFET (Metal Oxide)
RoHs Compliant
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This is manufactured by Fairchild/ON Semiconductor. The manufacturer part number is FDH50N50_F133. It has typical 16 weeks of manufacturer standard lead time. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-247-3. The maximum gate charge and given voltages include 137nc @ 10v. It has a maximum Rds On and voltage of 105 mohm @ 24a, 10v. It carries FET type n-channel. It is available in the standard package of 30. The fairchild/on semiconductor's product offers user-desired applications. The product has a 500v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 6460pf @ 25v. The product is available in through hole configuration. The product unifet™, is a highly preferred choice for users. to-247 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 48a (tc). The product carries maximum power dissipation 625w (tc). This product use mosfet (metal oxide) technology.

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Assembly Site Transfer 06/Apr/2015(PCN Assembly/Origin)
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Wafer Fabrication 04/Feb/2013(PCN Assembly/Origin)
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FDA50N50, FDH50N50(Datasheets)
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Tape and Box/Reel Barcode Update 07/Aug/2014(PCN Packaging)

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