Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
13 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
88 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2V
Height:
4.83mm
Width:
9.65mm
Length:
10.29mm
Maximum Drain Source Resistance:
140 mΩ
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
18.5 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
20 Weeks
Detailed Description:
P-Channel 60V 18.5A (Ta) 88W (Tc) Surface Mount D2PAK
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number:
NTB5605
Gate Charge (Qg) (Max) @ Vgs:
22nC @ 5V
Rds On (Max) @ Id, Vgs:
140mOhm @ 8.5A, 5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1190pF @ 25V
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
18.5A (Ta)
Customer Reference:
Power Dissipation (Max):
88W (Tc)
Technology:
MOSFET (Metal Oxide)
This is manufactured by ON Semiconductor. The manufacturer part number is NTB5605PT4G. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 13 nc @ 4.5 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 88 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 2v of maximum gate threshold voltage. In addition, the height is 4.83mm. Furthermore, the product is 9.65mm wide. Its accurate length is 10.29mm. It provides up to 140 mω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 18.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 20 weeks of manufacturer standard lead time. It features p-channel 60v 18.5a (ta) 88w (tc) surface mount d2pak. The typical Vgs (th) (max) of the product is 2v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. Base Part Number: ntb5605. The maximum gate charge and given voltages include 22nc @ 5v. It has a maximum Rds On and voltage of 140mohm @ 8.5a, 5v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 5v. The on semiconductor's product offers user-desired applications. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 1190pf @ 25v. d2pak is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 18.5a (ta). The product carries maximum power dissipation 88w (tc). This product use mosfet (metal oxide) technology.
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