Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
14.1 nC @ 11.5 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
32.6 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.5V
Height:
2.38mm
Width:
7.49mm
Length:
6.73mm
Maximum Drain Source Resistance:
25 mΩ
Package Type:
IPAK (TO-251)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
35 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Detailed Description:
N-Channel 30V 6.9A (Ta), 35A (Tc) 1.26W (Ta), 32.6W (Tc) Through Hole I-PAK
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-251-3 Stub Leads, IPak
Base Part Number:
NTD4815
Gate Charge (Qg) (Max) @ Vgs:
14.1nC @ 11.5V
Rds On (Max) @ Id, Vgs:
15mOhm @ 30A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 11.5V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
770pF @ 12V
Mounting Type:
Through Hole
Supplier Device Package:
I-PAK
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
6.9A (Ta), 35A (Tc)
Customer Reference:
Power Dissipation (Max):
1.26W (Ta), 32.6W (Tc)
Technology:
MOSFET (Metal Oxide)
