ON Semiconductor NTD4815N-35G
Product Information
Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
14.1 nC @ 11.5 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
32.6 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.5V
Height:
2.38mm
Width:
7.49mm
Length:
6.73mm
Maximum Drain Source Resistance:
25 mΩ
Package Type:
IPAK (TO-251)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
35 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Detailed Description:
N-Channel 30V 6.9A (Ta), 35A (Tc) 1.26W (Ta), 32.6W (Tc) Through Hole I-PAK
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-251-3 Stub Leads, IPak
Base Part Number:
NTD4815
Gate Charge (Qg) (Max) @ Vgs:
14.1nC @ 11.5V
Rds On (Max) @ Id, Vgs:
15mOhm @ 30A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 11.5V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
770pF @ 12V
Mounting Type:
Through Hole
Supplier Device Package:
I-PAK
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
6.9A (Ta), 35A (Tc)
Customer Reference:
Power Dissipation (Max):
1.26W (Ta), 32.6W (Tc)
Technology:
MOSFET (Metal Oxide)
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Yes. We ship NTD4815N-35G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NTD4815N-35G. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 14.1 nc @ 11.5 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 32.6 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 2.5v of maximum gate threshold voltage. In addition, the height is 2.38mm. Furthermore, the product is 7.49mm wide. Its accurate length is 6.73mm. It provides up to 25 mω maximum drain source resistance. The package is a sort of ipak (to-251). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 35 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 2 weeks of manufacturer standard lead time. It features n-channel 30v 6.9a (ta), 35a (tc) 1.26w (ta), 32.6w (tc) through hole i-pak. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-251-3 stub leads, ipak. Base Part Number: ntd4815. The maximum gate charge and given voltages include 14.1nc @ 11.5v. It has a maximum Rds On and voltage of 15mohm @ 30a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 11.5v. The on semiconductor's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 770pf @ 12v. i-pak is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 6.9a (ta), 35a (tc). The product carries maximum power dissipation 1.26w (ta), 32.6w (tc). This product use mosfet (metal oxide) technology.
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