Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
14.3 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.3 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
4V
Height:
1.57mm
Width:
3.5mm
Length:
6.5mm
Maximum Drain Source Resistance:
185 mΩ
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
2.6 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+175 °C
Pin Count:
3 + Tab
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
52 Weeks
Detailed Description:
P-Channel 60V 1.7A (Ta) 1W (Ta) Surface Mount SOT-223
Vgs(th) (Max) @ Id:
4V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Base Part Number:
NTF2955
Gate Charge (Qg) (Max) @ Vgs:
14.3nC @ 10V
Rds On (Max) @ Id, Vgs:
185mOhm @ 2.4A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
492pF @ 25V
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-223
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
1.7A (Ta)
Customer Reference:
Power Dissipation (Max):
1W (Ta)
Technology:
MOSFET (Metal Oxide)
