Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
15 nC @ 10 V dc
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
55 W
Maximum Gate Source Voltage:
-25 V, +25 V
Maximum Gate Threshold Voltage:
4V
Height:
6.35mm
Width:
2.38mm
Length:
6.73mm
Maximum Drain Source Resistance:
180 mΩ
Package Type:
IPAK (TO-251)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
12 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Base Part Number:
NTD2955
Detailed Description:
P-Channel 60V 12A (Ta) 55W (Tj) Through Hole I-PAK
Input Capacitance (Ciss) (Max) @ Vds:
750pF @ 25V
Drive Voltage (Max Rds On, Min Rds On):
10V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
4V @ 250µA
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
30nC @ 10V
Rds On (Max) @ Id, Vgs:
180mOhm @ 6A, 10V
Supplier Device Package:
I-PAK
Packaging:
Tube
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Power Dissipation (Max):
55W (Tj)
Current - Continuous Drain (Id) @ 25°C:
12A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
