ON Semiconductor NTTFS3A08PZTWG
Product Information
Base Part Number:
NTTFS3
Detailed Description:
P-Channel 20V 9A (Ta) 840mW (Ta) Surface Mount 8-WDFN (3.3x3.3)
Input Capacitance (Ciss) (Max) @ Vds:
5000pF @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1V @ 250µA
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±8V
Gate Charge (Qg) (Max) @ Vgs:
56nC @ 4.5V
Rds On (Max) @ Id, Vgs:
6.7mOhm @ 12A, 4.5V
Supplier Device Package:
8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
8-PowerWDFN
Power Dissipation (Max):
840mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
9A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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Yes. We ship NTTFS3A08PZTWG Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NTTFS3A08PZTWG. Base Part Number: nttfs3. It features p-channel 20v 9a (ta) 840mw (ta) surface mount 8-wdfn (3.3x3.3). The product's input capacitance at maximum includes 5000pf @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1v @ 250µa. The product has a 20v drain to source voltage. The maximum Vgs rate is ±8v. The maximum gate charge and given voltages include 56nc @ 4.5v. It has a maximum Rds On and voltage of 6.7mohm @ 12a, 4.5v. 8-wdfn (3.3x3.3) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type p-channel. Moreover, the product comes in 8-powerwdfn. The product carries maximum power dissipation 840mw (ta). The continuous current drain at 25°C is 9a (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.
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