ON Semiconductor NTRV4101PT1G

NTRV4101PT1G ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
49 Weeks
Detailed Description:
P-Channel 20V 1.8A (Ta) 420mW (Ta) Surface Mount SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id:
1.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Base Part Number:
NTRV4101
Gate Charge (Qg) (Max) @ Vgs:
8.5nC @ 4.5V
Rds On (Max) @ Id, Vgs:
85mOhm @ 1.6A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
675pF @ 10V
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3 (TO-236)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
1.8A (Ta)
Customer Reference:
Power Dissipation (Max):
420mW (Ta)
Technology:
MOSFET (Metal Oxide)
RoHs Compliant
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is NTRV4101PT1G. It has typical 49 weeks of manufacturer standard lead time. It features p-channel 20v 1.8a (ta) 420mw (ta) surface mount sot-23-3 (to-236). The typical Vgs (th) (max) of the product is 1.2v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Base Part Number: ntrv4101. The maximum gate charge and given voltages include 8.5nc @ 4.5v. It has a maximum Rds On and voltage of 85mohm @ 1.6a, 4.5v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. The on semiconductor's product offers user-desired applications. The product has a 20v drain to source voltage. The maximum Vgs rate is ±8v. The product's input capacitance at maximum includes 675pf @ 10v. The product is available in surface mount configuration. sot-23-3 (to-236) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 1.8a (ta). The product carries maximum power dissipation 420mw (ta). This product use mosfet (metal oxide) technology.

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Datasheet NTRV4101PT1G(Technical Reference)
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Compound Qualification 23/Jun/2019(PCN Assembly/Origin)
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NTR(V)4101P(Datasheets)
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SOT23 27/Sep/2016(PCN Design/Specification)

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