Rohm Semiconductor RDD050N20TL

RDD050N20TL Rohm Semiconductor
RDD050N20TL
Rohm Semiconductor

Product Information

Base Part Number:
RDD050
Detailed Description:
N-Channel 200V 5A (Ta) 20W (Tc) Surface Mount CPT3
Input Capacitance (Ciss) (Max) @ Vds:
292pF @ 10V
Drive Voltage (Max Rds On, Min Rds On):
10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
4V @ 1mA
Drain to Source Voltage (Vdss):
200V
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
9.3nC @ 10V
Rds On (Max) @ Id, Vgs:
720mOhm @ 2.5A, 10V
Supplier Device Package:
CPT3
Packaging:
Cut Tape (CT)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max):
20W (Tc)
Current - Continuous Drain (Id) @ 25°C:
5A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is RDD050N20TL. Base Part Number: rdd050. It features n-channel 200v 5a (ta) 20w (tc) surface mount cpt3. The product's input capacitance at maximum includes 292pf @ 10v. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 4v @ 1ma. The product has a 200v drain to source voltage. The maximum Vgs rate is ±30v. The maximum gate charge and given voltages include 9.3nc @ 10v. It has a maximum Rds On and voltage of 720mohm @ 2.5a, 10v. cpt3 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. It carries FET type n-channel. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. The product carries maximum power dissipation 20w (tc). The continuous current drain at 25°C is 5a (ta). This product use mosfet (metal oxide) technology. The rohm semiconductor's product offers user-desired applications.

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RDD050N20(Datasheets)

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