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Diodes Incorporated DMT10H015LSS-13

DMT10H015LSS-13 Diodes Incorporated
DMT10H015LSS-13
Diodes Incorporated

Product Information

Manufacturer Standard Lead Time:
30 Weeks
Detailed Description:
N-Channel 100V 8.3A (Ta) 1.2W (Ta) Surface Mount 8-SO
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Base Part Number:
DMT10
Gate Charge (Qg) (Max) @ Vgs:
33.3nC @ 10V
Rds On (Max) @ Id, Vgs:
16mOhm @ 20A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
Diodes Incorporated
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1871pF @ 50V
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
8.3A (Ta)
Customer Reference:
Power Dissipation (Max):
1.2W (Ta)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Diodes Incorporated. The manufacturer part number is DMT10H015LSS-13. It has typical 30 weeks of manufacturer standard lead time. It features n-channel 100v 8.3a (ta) 1.2w (ta) surface mount 8-so. The typical Vgs (th) (max) of the product is 3.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). Base Part Number: dmt10. The maximum gate charge and given voltages include 33.3nc @ 10v. It has a maximum Rds On and voltage of 16mohm @ 20a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The diodes incorporated's product offers user-desired applications. The product has a 100v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 1871pf @ 50v. The product is available in surface mount configuration. 8-so is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 8.3a (ta). The product carries maximum power dissipation 1.2w (ta). This product use mosfet (metal oxide) technology.

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Mult Dev Assembly/Materials 25/Mar/2019(PCN Assembly/Origin)
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DMT10H015LSS(Datasheets)
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Diodes RoHS 3 Cert(Environmental Information)

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FAQs

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You can order Diodes Incorporated brand products with DMT10H015LSS-13 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Diodes Incorporated DMT10H015LSS-13. You can also check on our website or by contacting our customer support team for further order details on Diodes Incorporated DMT10H015LSS-13.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11294043 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Diodes Incorporated" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11294043.
Yes. We ship DMT10H015LSS-13 Internationally to many countries around the world.