ON Semiconductor ATP302-TL-H
Product Information
Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
115 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
70 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.6V
Height:
1.5mm
Width:
7.3mm
Length:
6.5mm
Maximum Drain Source Resistance:
18 mΩ
Package Type:
ATPAK
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
70 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
ATP302
Detailed Description:
P-Channel 60V 70A (Ta) 70W (Tc) Surface Mount ATPAK
Input Capacitance (Ciss) (Max) @ Vds:
5400pF @ 20V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Mounting Type:
Surface Mount
Rds On (Max) @ Id, Vgs:
13mOhm @ 35A, 10V
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
115nC @ 10V
Supplier Device Package:
ATPAK
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
ATPAK (2 leads+tab)
Power Dissipation (Max):
70W (Tc)
Current - Continuous Drain (Id) @ 25°C:
70A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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FAQs
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Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ON Semiconductor ATP302-TL-H. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor ATP302-TL-H.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11271236 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11271236.
Yes. We ship ATP302-TL-H Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is ATP302-TL-H. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 115 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 70 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. The product carries 2.6v of maximum gate threshold voltage. In addition, the height is 1.5mm. Furthermore, the product is 7.3mm wide. Its accurate length is 6.5mm. It provides up to 18 mω maximum drain source resistance. The package is a sort of atpak. It consists of 1 elements per chip. While 70 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. Base Part Number: atp302. It features p-channel 60v 70a (ta) 70w (tc) surface mount atpak. The product's input capacitance at maximum includes 5400pf @ 20v. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It has a maximum Rds On and voltage of 13mohm @ 35a, 10v. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 115nc @ 10v. atpak is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type p-channel. Moreover, the product comes in atpak (2 leads+tab). The product carries maximum power dissipation 70w (tc). The continuous current drain at 25°C is 70a (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.
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