Rohm Semiconductor RQ3G100GNTB

RQ3G100GNTB Rohm Semiconductor
Rohm Semiconductor

Product Information

Manufacturer Standard Lead Time:
16 Weeks
Detailed Description:
N-Channel 40V 10A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
8-PowerVDFN
Base Part Number:
RQ3G100
Gate Charge (Qg) (Max) @ Vgs:
8.4nC @ 10V
Rds On (Max) @ Id, Vgs:
14.3mOhm @ 10A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
Rohm Semiconductor
Drain to Source Voltage (Vdss):
40V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
615pF @ 20V
Mounting Type:
Surface Mount
Supplier Device Package:
8-HSMT (3.2x3)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
10A (Ta)
Customer Reference:
Power Dissipation (Max):
2W (Ta)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Rohm Semiconductor. The manufacturer part number is RQ3G100GNTB. It has typical 16 weeks of manufacturer standard lead time. It features n-channel 40v 10a (ta) 2w (ta) surface mount 8-hsmt (3.2x3). The typical Vgs (th) (max) of the product is 2.5v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 8-powervdfn. Base Part Number: rq3g100. The maximum gate charge and given voltages include 8.4nc @ 10v. It has a maximum Rds On and voltage of 14.3mohm @ 10a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The rohm semiconductor's product offers user-desired applications. The product has a 40v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 615pf @ 20v. The product is available in surface mount configuration. 8-hsmt (3.2x3) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 10a (ta). The product carries maximum power dissipation 2w (ta). This product use mosfet (metal oxide) technology.

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Transistor, MOSFET Level 1 MSL(Environmental Information)
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RQ3G100GN ESD Data(Environmental Information)
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Transistor Whisker Info(Environmental Information)
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HSMT8-HF Constitution Material List(Environmental Information)
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RQ3G100GN(Datasheets)
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HSMT8 TB Taping Spec(Datasheets)
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HSMT8 Part Marking(Other Related Documents)
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Transistor, MOSFET Flammability(Other Related Documents)
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HSMT8 Inner Structure(Other Related Documents)

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