ON Semiconductor 2SK4177-DL-1E
Product Information
Base Part Number:
2SK4177
Detailed Description:
N-Channel 1500V 2A (Ta) 80W (Tc) Surface Mount TO-263-2
Input Capacitance (Ciss) (Max) @ Vds:
380pF @ 30V
Mounting Type:
Surface Mount
Rds On (Max) @ Id, Vgs:
13Ohm @ 1A, 10V
Drain to Source Voltage (Vdss):
1500V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
37.5nC @ 10V
Supplier Device Package:
TO-263-2
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max):
80W (Tc)
Current - Continuous Drain (Id) @ 25°C:
2A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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Yes. We ship 2SK4177-DL-1E Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is 2SK4177-DL-1E. Base Part Number: 2sk4177. It features n-channel 1500v 2a (ta) 80w (tc) surface mount to-263-2. The product's input capacitance at maximum includes 380pf @ 30v. The product is available in surface mount configuration. It has a maximum Rds On and voltage of 13ohm @ 1a, 10v. The product has a 1500v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 37.5nc @ 10v. to-263-2 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. The product carries maximum power dissipation 80w (tc). The continuous current drain at 25°C is 2a (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.
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