Renesas Electronics America NP33N06YDG-E1-AY
Product Information
Rds On (Max) @ Id, Vgs:
14mOhm @ 16.5A, 10V
Detailed Description:
N-Channel 60V 33A (Tc) 1W (Ta), 97W (Tc) Surface Mount 8-HSON
Input Capacitance (Ciss) (Max) @ Vds:
3900pF @ 25V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
78nC @ 10V
Supplier Device Package:
8-HSON
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Packaging:
Tape & Reel (TR)
Operating Temperature:
175°C (TJ)
FET Type:
N-Channel
Package / Case:
8-SMD, Flat Lead Exposed Pad
Power Dissipation (Max):
1W (Ta), 97W (Tc)
Current - Continuous Drain (Id) @ 25°C:
33A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Renesas Electronics America
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Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Renesas Electronics America NP33N06YDG-E1-AY. You can also check on our website or by contacting our customer support team for further order details on Renesas Electronics America NP33N06YDG-E1-AY.
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Yes. We ship NP33N06YDG-E1-AY Internationally to many countries around the world.
This is manufactured by Renesas Electronics America. The manufacturer part number is NP33N06YDG-E1-AY. It has a maximum Rds On and voltage of 14mohm @ 16.5a, 10v. It features n-channel 60v 33a (tc) 1w (ta), 97w (tc) surface mount 8-hson. The product's input capacitance at maximum includes 3900pf @ 25v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 78nc @ 10v. 8-hson is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tape & reel (tr) is the available packaging type of the product. The product has 175°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in 8-smd, flat lead exposed pad. The product carries maximum power dissipation 1w (ta), 97w (tc). The continuous current drain at 25°C is 33a (tc). This product use mosfet (metal oxide) technology. The renesas electronics america's product offers user-desired applications.
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