Vishay Siliconix SQD50P04-09L_GE3
Product Information
Detailed Description:
P-Channel 40V 50A (Tc) 136W (Tc) Surface Mount TO-252, (D-Pak)
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
SQD50
Gate Charge (Qg) (Max) @ Vgs:
155nC @ 10V
Rds On (Max) @ Id, Vgs:
9.4mOhm @ 17A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
40V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
6675pF @ 20V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
TO-252, (D-Pak)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
50A (Tc)
Customer Reference:
Power Dissipation (Max):
136W (Tc)
Technology:
MOSFET (Metal Oxide)
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This is manufactured by Vishay Siliconix. The manufacturer part number is SQD50P04-09L_GE3. It features p-channel 40v 50a (tc) 136w (tc) surface mount to-252, (d-pak). The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Base Part Number: sqd50. The maximum gate charge and given voltages include 155nc @ 10v. It has a maximum Rds On and voltage of 9.4mohm @ 17a, 10v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The vishay siliconix's product offers user-desired applications. The product has a 40v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 6675pf @ 20v. The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. to-252, (d-pak) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 50a (tc). The product carries maximum power dissipation 136w (tc). This product use mosfet (metal oxide) technology.
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