Category:
Power MOSFET
Dimensions:
2 x 1.6 x 0.85mm
Maximum Continuous Drain Current:
3.5 A
Transistor Material:
Si
Width:
1.6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1.3V
Maximum Drain Source Resistance:
64 mΩ
Package Type:
MCPH
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
2.8 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
260 pF @ 10 V
Length:
2mm
Pin Count:
3
Typical Turn-Off Delay Time:
30 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
900 mW
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
0.85mm
Typical Turn-On Delay Time:
6.2 ns
Base Part Number:
MCH3479
Detailed Description:
N-Channel 20V 3.5A (Ta) 900mW (Ta) Surface Mount SC-70FL/MCPH3
Input Capacitance (Ciss) (Max) @ Vds:
260pF @ 10V
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Mounting Type:
Surface Mount
Rds On (Max) @ Id, Vgs:
64mOhm @ 1.5A, 4.5V
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±12V
Gate Charge (Qg) (Max) @ Vgs:
2.8nC @ 4.5V
Supplier Device Package:
SC-70FL/MCPH3
Packaging:
Tape & Reel (TR)
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
3-SMD, Flat Lead
Power Dissipation (Max):
900mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
3.5A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
