Category:
Power MOSFET
Dimensions:
2.9 x 1.6 x 0.9mm
Maximum Continuous Drain Current:
2.5 A
Transistor Material:
Si
Width:
1.6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1.4V
Maximum Drain Source Resistance:
320 mΩ
Package Type:
CPH
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
3.3 nC @ 4.5 V
Channel Type:
P
Typical Input Capacitance @ Vds:
250 pF @ -10 V
Length:
2.9mm
Pin Count:
3
Typical Turn-Off Delay Time:
34 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1 W
Maximum Gate Source Voltage:
-10 V, +10 V
Height:
0.9mm
Typical Turn-On Delay Time:
5.7 ns
Base Part Number:
CPH3356
Detailed Description:
P-Channel 20V 2.5A (Ta) 1W (Ta) Surface Mount 3-CPH
Input Capacitance (Ciss) (Max) @ Vds:
250pF @ 10V
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Mounting Type:
Surface Mount
Rds On (Max) @ Id, Vgs:
137mOhm @ 1A, 4.5V
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±10V
Gate Charge (Qg) (Max) @ Vgs:
3.3nC @ 4.5V
Supplier Device Package:
3-CPH
Packaging:
Tape & Reel (TR)
Operating Temperature:
150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max):
1W (Ta)
Current - Continuous Drain (Id) @ 25°C:
2.5A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
