Category:
Power MOSFET
Dimensions:
2 x 1.6 x 0.85mm
Maximum Continuous Drain Current:
2 A
Transistor Material:
Si
Width:
1.6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
1.3V
Package Type:
MCHP
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
1.7 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
130 pF @ 10 V
Length:
2mm
Pin Count:
3
Typical Turn-Off Delay Time:
16 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.2 W
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
0.85mm
Typical Turn-On Delay Time:
4.4 ns
Maximum Drain Source Resistance:
375 mΩ
Base Part Number:
MCH3478
Detailed Description:
N-Channel 30V 2A (Ta) 800mW (Ta) Surface Mount 3-MCPH
Input Capacitance (Ciss) (Max) @ Vds:
130pF @ 10V
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Mounting Type:
Surface Mount
Rds On (Max) @ Id, Vgs:
165mOhm @ 1A, 4.5V
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±12V
Gate Charge (Qg) (Max) @ Vgs:
1.7nC @ 4.5V
Supplier Device Package:
3-MCPH
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
3-SMD, Flat Leads
Power Dissipation (Max):
800mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
2A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
