Central Semiconductor Corp CDM2206-800LR SL
Product Information
Manufacturer Standard Lead Time:
12 Weeks
Rds On (Max) @ Id, Vgs:
950 mOhm @ 3A, 10V
Detailed Description:
N-Channel 800V 6A (Tc) 110W (Tc) Through Hole TO-220
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
4V @ 250µA
Drain to Source Voltage (Vdss):
800V
Vgs (Max):
30V
Gate Charge (Qg) (Max) @ Vgs:
24.3nC @ 10V
Supplier Device Package:
TO-220
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Package / Case:
TO-220-3
Power Dissipation (Max):
110W (Tc)
Current - Continuous Drain (Id) @ 25°C:
6A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Central Semiconductor Corp
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FAQs
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Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Central Semiconductor Corp CDM2206-800LR SL. You can also check on our website or by contacting our customer support team for further order details on Central Semiconductor Corp CDM2206-800LR SL.
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Yes. We ship CDM2206-800LR SL Internationally to many countries around the world.
This is manufactured by Central Semiconductor Corp. The manufacturer part number is CDM2206-800LR SL. It has typical 12 weeks of manufacturer standard lead time. It has a maximum Rds On and voltage of 950 mohm @ 3a, 10v. It features n-channel 800v 6a (tc) 110w (tc) through hole to-220. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has a 800v drain to source voltage. The maximum Vgs rate is 30v. The maximum gate charge and given voltages include 24.3nc @ 10v. to-220 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-220-3. The product carries maximum power dissipation 110w (tc). The continuous current drain at 25°C is 6a (tc). This product use mosfet (metal oxide) technology. The central semiconductor corp's product offers user-desired applications.
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